دیتاشیت IPP023N10N5-VB
مشخصات دیتاشیت
| نام دیتاشیت |
IPP023N10N5-VB
|
| حجم فایل |
66.635
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
VBsemi Elec IPP023N10N5-VB
-
Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
120A
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
5mΩ@10V,120A
-
Package:
TO-220AB-3
-
Manufacturer:
VBsemi Elec
